发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PURPOSE:To reduce reactive currents, and to improve high-frequency modulation characteristics by forming a striped mesa section, a buried layer adjacent to a longitudinal side surface and a current breaking region shaped through ion irradiation from the surface at a proper position capable of breaking reactive currents. CONSTITUTION:A striped mesa section having a hetero-junction and constituting an optical resonator and buried layers adjacent to side surfaces in the longitudinal direction in the striped mesa section are shaped, and proper positions on said buried layer sides from edges along the longitudinal direction of the striped mesa section are irradiated by ions while combining focusing ion-beam irradiation or a mask,thus forming current breaking regions 20, 21. According to the constitution, reactive currents flowing through a capacitance can be reduced, thus improving high-frequency modulation characteristics.
申请公布号 JPS6193689(A) 申请公布日期 1986.05.12
申请号 JP19840214402 申请日期 1984.10.15
申请人 FUJITSU LTD 发明人 SHIBATOMI AKIHIRO
分类号 H01S5/00;H01S5/227 主分类号 H01S5/00
代理机构 代理人
主权项
地址