| 摘要 |
PURPOSE:To prevent the aggravation of corrosion due to formation of a local battery between a wire and a conductor pattern and the occurrence of wire breakdown, by providing a window in an insulating layer, providing the conductor pattern so that it is exposed at the peripheral part of a semiconductor chip, and forming a pad part on the window part in a double-layer structure, so that the part is covered by a conductor layer. CONSTITUTION:A conductor layer is formed on a pad part. A pattern is formed by using a photoetching technology. Thus a pad 8 having a double-layer structure is formed. Namely, a metal film having the same composition as that of the conductor layer is formed on a PSG layer 3, in which a window is opened. The metal film is selectively etched. A pad part 7, which is a size larger than a conventional pad part, is formed. When the pad part 7 having the double structure is used, the thickness of the conductor pattern can be made sufficiently large. Therefore the conductor pattern is not locally narrowed by the solid solution yielded in welding Au wire 6. Occurrence of a local battery phenomenon due to infiltration of moisture cannot be avoided. Since the pad 8 is thick, however, wire breakdown is hard to occur. |
