| 摘要 |
PURPOSE:To eliminate an effect on an adjacent element of long-wave length reflected beams, and to improve optical wavelength selectivity by forming a back transparent conductive film between an amorphous thin-film semiconductor layer and a back electrode and setting the film thickness and refractive index of the back transparent conductive film so as to display selective reflecting properties by the interference of multiple reflection. CONSTITUTION:A conductive transparent film is formed between a thin-film semiconductor layer and a back electrode, thus giving the back of the thin-film semiconductor layer selective reflecting properties completely independently of the electrical characteristics of the thin-film semiconductor layer by utilizing the interference action of multiple reflection by the interface between the thin-film semiconductor layer and the back transparent conductive film and the inter face between the back transparent conductive film and the back electrode. In the title device such as a color sensor 1, a surface transparent electrode 13, a color filter 12 and an insulating protective film 11 are applied and shaped on the beam projection surface side of P-I-N type thin-film amorphous silicon semiconductor layers 14 in succession. On the other hand, the back transparent conductive film 16 and a back semiconductor (18: the back electrode) consisting of N type single crystal silicon are laminated on the surface on the side reverse to a beam projecting surface through metallic thin-films 15, 17. The thickness of the back transparent film 16 is brought to approximately 4,000Angstrom and a refractive index thereof to approximately 1.7. |
