| 摘要 |
PURPOSE:To inhibit the increase of contact resistance, and to prevent the generation of a coarse projection due to heat treatment by forming a first layer by an Al.Si alloy film and a second layer by an Al.M alloy film and specifying Si content contained in the first layer and M content contained in the second layer respectively. CONSTITUTION:A first layer consists of an Al.Si alloy film, and a second layer is formed in a composite aluminum alloy film composed of Al.M (M represents either simple substance metal or a plurality of metals of Ti, V, Zr, Mo, W and Cr). A composite aluminum alloy film in which Si content contained in the first layer is brought to 0.5-2wt% composite aluminum alloy film and M content contained in the second layer to 0.05-5wt% respectively is shaped as a wiring layer. The metal contained in the second layer includes a metal which diffuses in Al and is difficult to dissolve in Al. According to such structure, contact resistance does not increase, projections are also miniaturized and equalized, particles are also fined, and Si due to dry etching does not remain. |
