| 摘要 |
PURPOSE:To improve electrical yield by coating the upper section of an alpha-ray inhibiting layer as a first layer, in which innumerable air bubbles are generated in organic high molecules, with an alpha-ray inhibiting layer as a second layer. CONSTITUTION:A semiconductor chip 201 to which a wafer processing process is completed is bonded with a ceramic case 202 by a gold silicon eutectic material 203. A first layer alpha-ray inhibiting material 207 consisting of a liquid such as one in which a volatile organic solvent is mixed with an silicone resin by approximately 20-30% is cropped onto the semiconductor ship 201, and heated up to the curing temperature of the silicone resin, coating in which innumerable air bubbles 206 exist in the first layer alpha-ray inhibiting material 207 is applied, and a second layer alpha-ray inhibiting material 205 such as the silicone resin is dropped and the material 207 is coated with the material 205. The generation of capacitance can be lowered only by approximately 20-30% by pressure applied to the semiconductor chip by the formation of uniform air bubbles and permittivity of approximately 2.7-3.0%, and effects on a capacitor for memory of a semiconductor memory and a wiring capacitance and the like are reduced, thus improving electrical yield and characteristics. |
