| 摘要 |
PURPOSE:To satisfy the speeding-up of the growth rates of films and the improvement of photoelectric conversion efficiency simultaneously by using higher silane as a main raw material gas for an impurity layer on the substrate side of a semiconductor optical active layer and a substantial intrinsic layer while employing monosilane as a main raw material gas for an impurity layer formed after shaping the intrinsic layer. CONSTITUTION:When semiconductor optical active layers substantially having one P-I-N junction are formed from the substrate side, higher silane is used as a main raw material gas for an impurity layer on the substrate side of the optical active layers and a substantial intrinsic layer while employing monosilane as a main raw material gas for an impurity layer shaped after forming the intrinsic layer. Accordingly, the method functions as the reduction of damage due to the application of high power to the previously shaped impurity layer on the substrate side on the formation of the intrinsic layer as well as the lowering of damage even regarding the finally shaped impurity layer,thus simultaneously satisfying the speeding-up of the growth rates of mutually contrary films and the improvement of photoelectric conversion efficiency. |
