| 摘要 |
PURPOSE:To raise the breakdown voltage at collector.base junction due to field concentration by a method wherein an octagonal plane figured base region as an transistor element is formed as a basic component element. CONSTITUTION:An octagonal plane figured base region 12 is formed on a silicon region 11 as integrated circuit substrate. The base region 12 is formed by one time photoetching process by means of removing photoresist inside the figure 12 by exposing and developing the photoresist and then selectively ion planting the base region 12 with boron. Besides, a base contact 13, an emitter region 14 and a collector contact 15 are provided on the silicon region 11 as integrated circuit substrate. |
