| 摘要 |
PURPOSE:To realize a monocrystal semiconductor thin film all over a dielectric layer by isolating a semiconductor obtained by an epitaxial growth on a semiconductor substrate by a dielectric in advance. CONSTITUTION:After the second semiconductor thin film 5 is obtained, an epitaxial growth all over the first semiconductor substrate 1, and such as oxygen and nitrogen are ion-injected in the vicinity of the first and the second semiconductor interface, and then in heat-treated, a part of the first or the second semiconductors is converted into a dielectric layer 6. Because of this, it is not affected by a lattice of a substrate silicon in a heat treatment after that, an epitaxial growth is proceeded from a good crystalline germanium surface and an introduction of a lack caused by a lattice constant difference does not occur. |
