| 摘要 |
PURPOSE:To obtain the low resistance contact layer of the quality higher than that of an impurity contact layer by a method wherein a contact layer is formed on all insular regions simultaneously be forming an imbedded layer using silicide of single material. CONSTITUTION:A P type insular region 1 and an N type insular region 2 are formed on a semiconductor substrate 7. Then, a silicide film 11 is formed on the whole surface. Subsequently, a silicon dioxide film 3 of 2-3mum in thickness is formed by performing a chemical vapor deposition (CVD) method. Then, a polycrystalline silicon layer of several hundred mum in thickness is laminated by performing a vapor-phase growing method. Then, the greater part of the semiconductor substrate 7 is removed by grinding or etching, and a transistor is formed on each insular region respectively, thereby enabling to obtain a dielectric isolation type semiconductor device. |
