| 摘要 |
PURPOSE:To improve the normal and reverse symmetricalness of voltage-current characteristics by a method wherein two diodes made of insulating films and amorphous silicon films successively laminated with the same metallic films formed into the same type are connected in series in the reverse direction. CONSTITUTION:Silicon nitride or silicon dioxide insulating films 23, i-type amor phous silicon films 24 and N type amorphous films 25 are successively laminated on two lower electrodes 21, 22 formed of metal at the adjoining position on a glass substrate 20. Next the insulating films 23 and the i type amorphous silicon films 24 are formed into island type parts by etching process to be left only on the lower electrodes 21, 22. Besides, silicon nitride or silicon dioxide insulating films are formed into passivation films and then a contact hole for leading out electrodes is opened. Finally two MIS diodes may be connected with each other by upper electrodes 27 through the intermediary of the contact hole. Through these procedures, the threshold value may be increased to improve the normal and reverse symmetricalness of voltage-current characteristics. |
