| 摘要 |
PURPOSE:To obtain the titled element excellent in temperature characteristic, causing no pollution, and high-sensitive to light from visible to near infrared by a method wherein the photoconductor is made as a layer made mainly of amorphous hydrogenated Si. CONSTITUTION:An Si nitride layer 12 and an amorphous hydrogenated Si layer 13 are formed on a glass substrate 10 having an NESA film 11 and made as a photoconductor layer 14. Further, an Si oxide layer 15 and an In2O3 layer 16 are formed. This layer 16 is irradiated with patterns of light through the substrate 10 by impressing a voltage of -1,000V on the NESA film 11; thus, a distribution of electrons corresponding to the patterns of light is formed at the interface between the layer 13 and the Si oxide layer 15. When the In2O3 film 16 is short- circuited with the NESA film 11, a redistribution of charges generates on the NESA film 11 and the In2O3 layer 16 by corresponding to the patterns of charges trapped in the interface, and an electric field generates in the photoconductor layer 14 by corresponding to patterns of light. Flowing current is detected by scanning with He-Ne laser beams from the side of the In2O3 layer 16, thus converting the patterns of light into electrical signals of time series. |
