FIELD EFFECT TRANSISTOR UTILIZING SPECIFIED ELECTRODE MATERIAL FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE:To make film forming process easier by improving heat resisting property sufficient to endure annealing process by a method wherein a hexaboronide of rare earth element is utilized as an electrode material for semiconductor device utilizing compound semiconductor as a substrate. CONSTITUTION:An LaB6 film 2 0.3mum thick is evaporated on an N type GaAs substrate 1 at room temperature utilizing an electron gun. Firstly the evaporated film 2 is coated with photoresist and then a pattern is exposed to be removed leaving a necessary part 3. Secondly the evaporated film 2 is etched by hot H2O2 solution utilizing the photoresist 3 as a mask. Finally the photoresist 3 may be removed to form a Schottky diode.