摘要 |
PURPOSE:To increase the mechanical strength of a resin-sealed type semiconductor device by a method wherein the contact surface of the molded resin layer which comes in contact with a heat-radiating plate is formed into a curved surface or an obtune-angled curved surface on the part corresponding to the corner part of the heat radiating plate. CONSTITUTION:The molded resin layer 10, whereon a semiconductor element is sealed, is adhered to the prescribed region of the heat radiating plate 11 connected to the semiconductor element. A plurality of electrode terminals 12 are led out on the side part of the molded resin layer 10. The heat-radiating surface 13 of the molded resin layer 10 which comes in contact with the heat radiating plate 11 is formed in obtune-angled curved surface 14 at the part corresponding to the corner part of the heat radiating plate 11. The longitudinal and lateral length L of the curved surface 14 is set at 1mm or more when the whole weight of a resin-sealed type semiconductor device 20 is 5g or more. |