发明名称 RESIN SEALED TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase the mechanical strength of a resin-sealed type semiconductor device by a method wherein the contact surface of the molded resin layer which comes in contact with a heat-radiating plate is formed into a curved surface or an obtune-angled curved surface on the part corresponding to the corner part of the heat radiating plate. CONSTITUTION:The molded resin layer 10, whereon a semiconductor element is sealed, is adhered to the prescribed region of the heat radiating plate 11 connected to the semiconductor element. A plurality of electrode terminals 12 are led out on the side part of the molded resin layer 10. The heat-radiating surface 13 of the molded resin layer 10 which comes in contact with the heat radiating plate 11 is formed in obtune-angled curved surface 14 at the part corresponding to the corner part of the heat radiating plate 11. The longitudinal and lateral length L of the curved surface 14 is set at 1mm or more when the whole weight of a resin-sealed type semiconductor device 20 is 5g or more.
申请公布号 JPS6191951(A) 申请公布日期 1986.05.10
申请号 JP19840213483 申请日期 1984.10.12
申请人 TOSHIBA CORP 发明人 YAMAMOTO KENICHI;KAMIYA KINYA
分类号 H01L23/29;H01L23/28;H01L23/31 主分类号 H01L23/29
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