| 摘要 |
PURPOSE:To prevent generation of a short-circuit at the lower part of an aluminum wiring due to the sagging of a photoresist as well as to sharply improve the yield of production by a method wherein an anodized silicon oxide film is used as a mask instead of a photoresist. CONSTITUTION:A silicon oxide film 2 is coated on the surface of a silicon substrate 1, and after an aperture is selectively provided on the surface of the silicon oxide film 2 by performing a photoetching method, an aluminum film 3 is coated by performing a vapor-deposition or a sputtering, a silicon film 8 is coated by performing a vapor-deposition or a sputtering. Then, the silicon film 8 is converted to a silicon oxide film 9 by performing an anodic oxidation method, and an etching is selectively performed on the silicon oxide film 9 using a photoetching method. Then, the aluminum film 3 is converted to a porous alumina film 7 by performing an anodic oxidation method using the silicon oxide film 9 as a mask. |
