发明名称 MANUFACTURING DEVICE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To easily switch a mask plate by providing plural masks for implantation region restriction whose hole sizes are different in an ion implanting device. CONSTITUTION:A mask plate 6 for a big aperture wafer and a mask plate 7 for a small aperture wafer are provided in a beam line of an ion implanting device. When a big aperture wafer is ion-implanted, a mask plate 7 is devided and moved in a lateral direction and placed in a position which does not interfere with an ion beam 1. Then the mask plates can be easily switched. As it is not necessary to break a vacuum in switching the mask plates, an unnecessary ion is not mixed-in.
申请公布号 JPS6191921(A) 申请公布日期 1986.05.10
申请号 JP19840213858 申请日期 1984.10.12
申请人 NEC CORP 发明人 SUGIYAMA TOSHIAKI
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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