| 摘要 |
PURPOSE:To increase the threshold value by improving the normal and reverse symmetricalness of voltage-current characteristics by a method wherein two diodes made of pin or nip laminated film of the same amorphous silicon formed into the same type by patterning process are connected in series in the reverse direction. CONSTITUTION:P type (or N type) amorphous silicon films 23, i-type amorphous silicon films 24 and N type (or P type) amorphous silicon films 15 are successive ly laminated on two lower electrodes 21, 22 formed at adjoining position on a glass substrate 20. Next this three layer structure amorphous silicon films are formed into island type parts by etching process to be left only on the lower electrodes 21, 22. Besides, silicon nitride or silicon dioxide insulating films are formed into passivation films 26 and then a contact hole for leaving out electrodes is opened. Finally two pin (or nip) diodes may be connected with each other by upper electrodes 27 through the intermediary of the connecting hole. |
