| 摘要 |
PURPOSE:To prevent the arrival of electrons at the surface of a substrate and to prevent the damage of a grown crystal by providing a means for impressing horizontally a magnetic field in a chamber. CONSTITUTION:A conductor source is put into a crucible 1 in a vapor deposition machine of a bell-jar type, etc. The electron beam led out of an E-gun 2 in the process of vapor deposition is bent to strike against the conductor source in the crucible 1. The heated source melts and begins to evaporate When a shutter plate 3 is opened, the evaporated conductor vapor 17 advances rectilinearly in all directions and part thereof arrive at a substrate holder 4, thus forming a conductor film. The electrons 6 reflected by the source surface are bent by the magnetic field into the direction perpendicular to the advancing direction of the electron and magnetic flux when the magnetic field is impressed in the above-mentioned process by disposing permanent magnets or electromagnets 5, 5' having suitable intensity so as to face each other. The conductor vapor 7 having no electric charge advances rectilinearly and arrives at the Si substrate. The thin film is thus formed in the state of E-gun damage eliminated. |
