| 摘要 |
PURPOSE:To enable reduction and prevention of generation of picture defect by providing at least a lithium fluoride joint layer between an N type conductive layer and a P type photoconductive film. CONSTITUTION:A transparent conductive film 2 is fit to be formed on a back of a glass base plate 1 and an N type conductive layer 3 is formed on a back of the film 2 as a rectifying electric charge preventing layer. And on a back of the layer 3, lithium fluoride is applied in a thickness of 2-35nm by vacuum evaporation to form a joint tightening film 8 as a dark current preventing layer and on a back of the film 8, a P type photoconductive layer 4' made of a P type non-crystallized semiconductor film of Se-As-Te group is fit to be formed. As the result, joint leak current (dark current) due to electrolytic fluctuation in the film 4' during operation of an image pickup tube can be minimized and generation of insulation break generated with time pass from the start of operation of the image pickup tube can be prevented, then reliability and quality can be improved. |
