| 摘要 |
PURPOSE:To obtain the titled device of high reliability equipped with stable electrode wirings stable to high-temperature and long-time heat treatment by a method wherein the wiring layer is formed out of a nitride film of high melting point metal and a film of aluminum or aluminum alloy. CONSTITUTION:P type and N type conductive regions are formed on one main surface of an Si substrate 6 by diffusion and oxidation, and an Si oxide film 7 coating the main surface is provided with an electrode lead-out aperture; thereafter, titanium 8, titanium nitride 9, and aluminum 10 are successively adhered. Instead of the aluminum 10, the alloy of aluminum and silicon or copper can be used. Next, a photo resist pattern is formed on the aluminum 10, and the first layer wiring is obtained by successively etching the aluminum 10, titanium nitride 9, and titanium 8 in selectivity. Further, the Si substrate 6 including the first layer wiring is coated with an Si nitride film 11, and this film 11 is provided with an external lead-out electrode aperture, thus obtaining the titled device. Such a construction of films allows no generation of cavities even under heat treatment for approx. 1hr at 500 deg.C. |
