| 摘要 |
PURPOSE:To reduce the variability in threshold voltage caused by the lateral diffusion of impurity after injection by a method wherein a semiconductor layer of one conductivity type is formed on one main surface of a semiconductor, and a recess groove is formed in the surface of the semiconductor substrate across the semiconductor thickness. CONSTITUTION:An ion-implanted layer 2 is formed by Si ion implantation to the surface of the GaAs semi-insulation substrate 1. Thereafter, an Si nitride film 3 is deposited by CVD, and a window 4 is opened by photoetching technique and etched into the recess groove 5. At this time, if the thickness of the ion- implanted layer 2 is 1mum, the formation of an etching groove 5 of 1mum or more is needed. Next, an active layer 6 is formed by dissociation growth of GaAs at the side part of the recess groove 5 on heat treatment at 850 deg.C for 40min under As pressure. Thereafter, the Si nitride film 3 is removed, and another Si nitride film 7 is deposited. A source electrode 8 and a drain electrode 9 which are ohmic electrodes and a gate electrode 10 which is a Schottky electrode are formed by photoetching technique and evaporation technique. |
