发明名称 DICING METHOD FOR SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To prevent the generation of cracks by facilitate pelletization by a method wherein a semiconductor wafer is cooled by putting a dicing liquid in grooves formed in one main surface of the semiconductor wafer. CONSTITUTION:A PIN type photo diode 3 is formed in each element-forming region 2 of a semiconductor wafer 1, and a solder layer 4 is formed at the semiconductor laser connection part of the region 2. Next, grooves 6 are formed by half-dicing to the surface of the semiconductor wafer 1 along lines 5..Further, a laser chip 7 is bonded on each element-forming region 4, and e.g. water 8 is put in a container of lattice form consisting of the grooves 6. When the water 8 in the grooves 6 is frozen by cooling the semiconductor wafer 1, this wafer 1 is broken by the grooves on account of the expansion force in volume of the water 8. As a result, the element-forming regions 2 are pelletized and separated from each other. Since the expansion force of water can be adjusted by the width and depth of the groove 6, the cracks of semiconductor pellets can be eliminated by making the force of breakage strong moderately through this adjustment.</p>
申请公布号 JPS6190443(A) 申请公布日期 1986.05.08
申请号 JP19840213047 申请日期 1984.10.09
申请人 SONY CORP 发明人 KATO YOJI;AYABE MASAAKI;ODA TATSUJI
分类号 H01L21/301;H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/301
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