| 摘要 |
PURPOSE:To improve the yield of deposited films and to enable the formation of good deposited films by providing a means for mixing the unreacted gas exhausted from a reactor with a material gas again. CONSTITUTION:While exhausting the air by a vacuum pump and keeping a control valve 14 at a proper open degree, a material gas is introduced into a reactor 11 under a reduced pressure and a high-energy beam B is projected through a window 18 thereby depositing the material on a substrate (A). The material gas in the reactor 11 is sucked by an exhaust pipe 15 with leaving a part of it unreacted, but when a suction pump 21 is actuated, a part of the gas is sucked into a suction pipe 19. Various kinds of impurities are included in the sucked gas and the relatively large ones are caught by a filter 20. The gas which passed through the pump 21 reaches a refining device 22 and the residual minute impurities are removed by molecular sieves. The refined gas which has passed the refining device 22 reaches a gas mixing device 23 through a pipe 24 and is mixed with a material gas to be newly introduced sufficiently for use. Thus as the unreacted gas is utilized for deposition of films efficiently, a yield can be improved. |
