| 摘要 |
PURPOSE:To enable the prevention of the decrease in forward voltage drop, decrease in hFE, and increase in leakage current of the junction by a method wherein a semiconductor substrate having crystal defect of less than a given concentration is dotted with introduction windows and etched through the windows, and a heavy metal is introduced through the introduction windows to the inside including the neighborhood of the junction of one conductivity type and reverse conductivity type and the junction region. CONSTITUTION:The semiconductor substrate 1 having crystal defects of about 1X10<3>/cm<3> or less is inserted in an oxidizing atmosphere at high temperature, thus growing an Si oxide film 6 on the surface of the substrate 1. Required regions are opened by photoetching, and a base region 3 and an emitter region 5 are formed. Further, the substrate is dotted with introduction windows 7 by photoetching so that a heavy metal can be introduced to the emitter region 5 and the neighborhood of the emitter region 5 and then etched through the windows. The heavy metal 8 such as Ar or Pt is evaporated on the front of the substrate 1 having the introduced windows 7, and introduced by diffusion on heating, resulting in the formation of electrode 10 through a required treatment. Formation of unintroduced regions by dotting introduced regions 9 enables the decrease in forward voltage drop, increase in hFE, and decrease in leakage current of the junction. |
