发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce an electric power consumption at the time of read by limiting a memory cell to only one which selects the read current to be impressed to the memory cell. CONSTITUTION:Two pieces of MOSFET are provided at the output terminal of FF circuit and connected to data lines 201, 202. By such a structure, only the memory cell where a word line and Y line cross each other is connected to the data line at the time of reading information, and electric current is impressed from the data line to the cell. The cells other than this are not connected with the data line.
申请公布号 JPS6190388(A) 申请公布日期 1986.05.08
申请号 JP19840209717 申请日期 1984.10.08
申请人 HITACHI LTD 发明人 HIGUCHI HISAYUKI;SUZUKI MAKOTO;TACHIBANA MASARU;KITSUKAWA GORO
分类号 G11C11/41;G11C11/34;H01L21/8244;H01L27/10;H01L27/11 主分类号 G11C11/41
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