| 摘要 |
PURPOSE:To enable the titled device to have low contact resistance value and to increase the freedom degree of heat treatment with a small variation of characteristics in wafers, by adopting ion beam mixing to the formation of ohmic electrodes. CONSTITUTION:An insulation film is formed as the side wall only on the side surface of a gate electrode 3 after a gate electrode pattern is formed on the surface of a compound semiconductor operating layer 2. Thereafter, the whole is coated with a thin film 7 of IV group element, and an impurity showing the same conductivity type as that of the operating layer is injected through said film. Next, an ohmic electrode constituent substance is adhered by heat treatment. Therefore, it is possible to optimize the gate gap between a high concentration layer 9. The Vr controllability can be improved by reducing the short channel effect, and an ohmic electrode of small contact resistivity is provided close to the gate by using mixing technique, thereby attaining the reduction in parasitic resistance; besides, characteristics become uniform in wafers. Further, the freedom degree of heat treatment is made large. |
