Sense amplifier circuit.

摘要

A sense amplifier in use for a memory device is made up of a pair of Schmitt trigger circuits (20A, 20B). These Schmitt trigger circuits are cross coupled with each other so that each of the Schmitt trigger circuits operates in response to a predetermined high potential difference. The predetermined potential difference is high enough to operate each Schmitt trigger circuit according to the steeper slope of the two long slopes of a hysteresis loop of the Schmitt trigger circuit.