发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To stabilize the sensitivity of a resist film and to facilitate the selection of arbitrary conditions of sensitivity by a method wherein the resist film is heated up above a transition temperature by baking after it is exposed, and then the film is cooled down below the transition temperature at a prescribed speed prior to a developing process thereof. CONSTITUTION:Processes of application and prebaking of a resist film are the same with conventional ones, and the cooling of the resist film is conducted after prebaking. This cooling process may be conducted by natural cooling or any other method, and the thermal history thereof is ignored. Next, exposure of the resist film is conducted in the same way as in a conventional process. After the exposure, pre-development baking is applied, and this baking requires only a time taken until the resist film is heated up above a glass transition temperature Tg. After this pre-development baking is ended, cooling is conducted under a speed control. By controlling or selecting this speed of cooling, the sensitivity of the resist film can be controlled or selected. After this cooling process, processes of development, rinsing, etc. are performed in the same way as in a conventional method.
申请公布号 JPS6189632(A) 申请公布日期 1986.05.07
申请号 JP19840211678 申请日期 1984.10.09
申请人 TOSHIBA CORP 发明人 SHIGEMITSU FUMIAKI
分类号 H01L21/027;G03F7/00;G03F7/26;G03F7/38;G03F7/40;H01L21/30;(IPC1-7):H01L21/30 主分类号 H01L21/027
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