| 摘要 |
PURPOSE:To produce a narrow gate width with good reproducibility in an FET and allow high speed operation of the FET by forming a source or drain part on a main surface sandwiching a surface of a step on a semiconductor substrate having the step. CONSTITUTION:A step is provided on a p type or insulating substrate 1 and n type layers 6 are formed on first and second main surfaces sandwiching the step. In the step, an insulating film 4 is formed and a source electrode 2, a drain electrode 5 a nd a gate electrode 3 are provided on the n type layers 6 and the insulating film 4. In this configuration, an n type inverted layer is firstly formed on the step of the substrate 1 by applying a negative voltage to the gate electrode 3, thereby to allow conduction between the source electrode 2 and the drain electrode 5 and, therefore, allow FET operation. By this, a gate width is defined by the film thickness of the n type layers 6 to allow a gate width having the length of submicrons to be easily formed. |
