| 摘要 |
PURPOSE:To make uniform/the photoengraving conditions for each region and to enable the easy execution of a fine processing, by forming an insulating film in the indented portion around a mesa element after a mesa structure is formed, and by leveling substantially the entire top surface of a wafer. CONSTITUTION:After a mesa-form active layer 2a is formed on a substrate 1 by using a mask 3 in quite the same process as usual, an insulating film of silicon oxide or the like is formed by deposition in the thickness equaling the height (h) of the mesa on the whole surface by vacuum evaporation or the like, with the mask 3 left as it is, and an insulating film 5a is formed on the mask 3, while an insulating film 5b is formed in the indented portion formed around the mesa element 2a. When the mask 3 formed of a resist is removed by an organic solvent or the like after the insulating films 5a and 5b are formed, the insulating film 3a thereon is removed simultaneously, while the insulating film 5b in the indented portion along remains, and thus the top surface of a wafer is leveled substantially. |
