| 摘要 |
PURPOSE:To improve the characteristics, the film forming speed and the reproducibility of films while uniformizing the quality of the films and to enable the the films to be increased in surface area and to be mass-produced, by introducing a silicon compound to be a material and an activator separately into a film forming space, and applying electric discharge energy so as to deposit the film on a substrate. CONSTITUTION:By utilizing an activator which has been preactivated in a space different from a film forming space (decomposing space), it is enabled to remarkably improve the film forming speed in comparison with a conventional CVD process. In addition, it is also enabled to further decrease the substrate temperature during the formation of the deposited film. The activator having a life of 5 seconds or more, preferably of 15 seconds or more and most preferably of 30 seconds or more is selected, in view of productivity, handling convenience and the like, and is introduced from the decomposing space into the film forming space. Preferably, a silicon compound to be used as a material of the deposited film has been gasified before introduced into the film forming space or is gasified to be introduced thereinto. The silicon compound may be silane or the like in which silicon is combined with hydrogen or the like. |
