摘要 |
PURPOSE:To enable highly sensitive measurement, by forming a reference electrode and at least one kind of integrated enzyme FET on a substrate having a good insulating property. CONSTITUTION:In integrated enzyme FET for measuring an objective substance by the differential measurement of the change in phase boundary potential, for example, reference FET and at least one kind of enzyme FET are formed to a substrate having a good insulating property comprising saphire, tantalum oxide or rubby to eliminate the interference of the enzyme FET and the reference FET. Therefore, the lowering in threshold value voltage is prevented and highly sensitive measurement is enabled. |