| 摘要 |
PURPOSE:To obtain a thin film transistor easy to manufacture, having characteristics not deteriorated by shading and having the thickness of its semi conductor layer of 0.3mum or less by using a non-crystalline silicon film provided with its localized level density of 1X10<17>/(cm<3>,eV) or more near the Fermi level in a region contacting a surface opposite to a gate electrode. CONSTITUTION:In a thin film transistor composed of a non-crystalline semicon ductor film containing a gate electrode 11, a gate insulating film 12 and silicon, a drain electrode 15 and a source electrode 14, all of which are provided on an insulating substrate 10, a film having a non-crystalline silicon film 16 of which localized level is larger than 1X10<17>/(cm<3>,eV) and a non-crystalline silicon film 13 of which localized level density less than 1X10<17>/(cm<3>,eV) is used as a non-crystalline semiconductor film. This configuration allows photoconductivity of a non-crystalline silicon semiconductor layer to be lowered without deteriora tion in performances of the thin film transistor, which does not need provision of a shade film and eliminates deterioration in electric characteristics caused by the shade film. |
