| 摘要 |
<p>1. Mounting of a power semiconductor component in a pressed package wherein the power component (20) is pressed between lower and upper blocks (22, 23) of a metal of good thermal conductivity, said power component comprising on at least one face a power electrode metallization (11) and a control electrode metallization (12) which are branched and interdigitated in complementary fashion, a grid (13) cut from a foil of a metal such as molybdenum or tungsten the expansion coefficient of which is adapted to that of the semiconductor material forming said component (20) being disposed on the power electrode (11) on the face of the component (20), this mounting being characterized in that a foil (30) of a metal having the same expansion coefficient as the metal whereof the grating (13) is cut is interposed between the grating (13) and the upper metallic block (22).</p> |
