| 摘要 |
<p>A horizontal structure transistor (20, 68) is fabricated in a shallow epitaxial island (24, 70) which is completely surrounded by an insulator (22), such as oxide. The transistor (20, 68) has base (34, 80) and emitter (26, 84) regions which are diffused into the island (24, 70) from the same mask so that the width of the base (34, 80) is controllable and remains constant with respect to the emitter (26, 84). A polysilicon base contact (36, 96) rests on top of the island (24, 70) and is isolated from the emitter (26, 84) and collector (28, 86) regions by an oxide layer (90). The horizontal structure transistor can easily be fabricated to include complementary bipolar transistors (20 and 68) and complementary IGFET devices on the same substrate.</p> |
