| 摘要 |
PURPOSE:To perform a fine structure in a self-aligning manner and to simultaneously achieve an abrupt junction by the steps of forming the first single crystal which contains a conductor by low temperature simultaneous epitaxial etching technique, partly removing the insulating layer, and forming the second single crystal layer on the first single crystal layer in a self-aligning manner. CONSTITUTION:An N<+> type buried layer 12 is formed on a P type (111) substrate 11, a thermally oxidized film 13 is formed by high pressure oxidation, an emitter 14 is opened, this sample is charged in an epitaxial device (molecular beam epitaxial device) to form an epitaxial layer 15. As a result, the film 13 is considerably etched, and substantially flattened. Then, after the temperature is reduced, the P type layer 155 is epitaxially grown, Ga at this time is deposited from ionized cell, P type is doped, and then an N<+> type layer 17 is Sb-doped. At this time, the layers 16, 17 of single crystal are formed in a self-aligning manner on the layer 15, and polycrystalline layers 16', 17' are formed on the layer 13. Then, only the layer 17' is substantially removed by etching in a self-aligning manner. |
