| 摘要 |
PURPOSE:To obtain an image sensor which has large density and large area by integrating amorphous silicon diodes and witching amorphous silicon thin film transistors on the same insulating substrate. CONSTITUTION:An a-Si thin film transistor TFT for scanning a Schottky diode is formed of an insulating substrate (e.g., glass substrate) 1, a gate electrode 2 made of molybdenum (Mo), nickel/chromium (NiCr) or chromium (Cr), a gate insulating film 3 made of silicon dioxide (SiO2) or silicon nitride film (SiN4),m an active layer 4 of amorphous silicon (a-Si), an insulating film 5 of SiO2 or silicon nitride film for protecting a channel, an N<+> type a-Si film 6, drain and source electrode 7a, 7b of titanium (Ti), NiCr, Cr or aluminum (Al), and SiO2 (protective film) 8. An a-Si Schottky diode D is formed of a diode Schottky electrode or transparent electrode 9, an a-Si film 10, an aluminum or NiCr electrode material 11. |
