发明名称 |
Dual-access read/write digital storage device. |
摘要 |
<p>@ A single-array memory employs a novel storage cell providing dual read/write access via either an «A»-side or a «B»- side. The storage cell uses a unique circuit in which read current is borrowed during writing into the cell. Asymmetrical read/write delay circuitry is provided to avoid overwriting the contents of a storage cell during the read-to-write transition. Row-selection decoders use Schottky-clamping diodes in a way which provide an equivalent oscillation-damping capacitance at the base of the selected-row driver transistor. The single-array memory can be advantageously used as part of a single-chip VLSI four-port register file permitting simultaneous reading and/or writing of registers from any of two read ports or two write ports, respectively. Unidirectional busses connect each storage cell to each of the four ports.</p> |
申请公布号 |
EP0180467(A2) |
申请公布日期 |
1986.05.07 |
申请号 |
EP19850307866 |
申请日期 |
1985.10.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ALLEN, MICHAEL;HIRSCH, LEE |
分类号 |
G11C7/00;G11C8/16;G11C11/401;(IPC1-7):G11C8/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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