| 摘要 |
<p>PURPOSE:To reduce the generation of defects in a non-liner element by laminating a low-resistance N<+> type a-Si layer, an insulator layer and a low-resistance N<+> type a-Si layer in succession. CONSTITUTION:A lower electrode 11 is formed onto a glass substrate 10, and a low-resistance N<+> type a-Si layer 12, an silicon nitride or silicon dioxide insulating layer 13 and a low-resistance N<+> type a-Si layer 14 are laminated on the electrode 11 in succession through a CVD method. An upper electrode 15 is shaped onto the layer 14, thus constituting a non-linear element. The thickness of the layer 14 is brought to 1mum or more, thus reducing defects such as pin holes.</p> |
