| 摘要 |
PURPOSE:To obtain a diode having high reverse-blocking voltage by constituting a plurality of P type regions in dense equilateral hexagons when a P type annular region is formed to the surface layer section of an N type Si layer, the outside of the annular region is surrounded by an SiO2 film, the P type regions shaped into an N type layer surrounded by the annular region and these P type regions are coated with a Schottky barrier electrode. CONSTITUTION:An N type layer 12 is grown on an N<+> type Si substrate 11, on the back thereof a cathode electrode 17 is applied, a P type annular region 14 is diffused and shaped onto the surface layer section of the layer 12, and the outside of the region 14 is surrounded by an SiO2 film 15. A plurality of P type regions 13 are diffused and formed onto the surface layer section of the layer 12 surrounded by the region 14, and a Schottky barrier electrode 16 as an anode electrode is applied onto the surface containing these regions 13, but the regions 13 are shaped as follows at that time. That is, all of these regions 13 take an equilateral hexagon, spaced among these regions are made shorter than twice of the length of a space region extending when reverse voltage is applied, and projecting sections are formed previously at the apices of several triangle. Accordingly, a space charge region on an application in the opposite direction is extended over the whole surface of the layer 12, and reverse withstanding voltage is increased. |
