| 摘要 |
PURPOSE:To equalize threshold voltage by properly selecting the directions of a plurality of FETs formed to a compound semiconductor wafer. CONSTITUTION:A semiconductor device is constituted by a GaAs wafer 1 having a face index of (110) of a main surface and a FET2 formed so that the direction of drain currents IDS runs parallel with the (1-10) axis of the GaAs wafer 1. According to such constitution, a channel region in the FET2 is difficult to be affected by piezoelectric polarization, piezo-charges, thus eliminating the dispersion of threshold voltage. |
