| 摘要 |
PURPOSE:To obtain a grown film of uniform thickness by providing sinks of gas between wafers and exhausting the gas which enters from periphery of wafer to the center of wafers. CONSTITUTION:Wafers 4 are placed in parallel with equal interval within a furnace core tube 1 and the gas leadout ports 5 are provided between wafers. According to this structure, even when wafer has large diameter, gas enters the interior from the periphery of wafer, the gas completing the reaction is exhausted from the center of wafer through the gas exhaust port 5. Thereby, the gas is easily supplied to the center, making small difference of film thickness with the periphery. |
