| 摘要 |
PURPOSE:To equalize the characteristics of a photosensor while increasing the speed of reading by continuously changing the refractive index of a photoconductive layer in the sensor constituting a picture reader in the direction of film thickness and bringing a refractive index in beams having a wavelength of 6,328Angstrom to 3.2 or less in a section in thickness of 1,000Angstrom or less in the vicinity of the surface of a substrate. CONSTITUTION:An a-Si layer 2 as an undercoating layer having a refractive index of 3.2 or less at a wavelength of 6,328Angstrom and an a-Si layer 3 having a refractive index of 3.2 or more, preferably, approximately 3.4, are laminated and formed onto a quartz substrate 1, an ohmic contact layer 4 is shaped to the peripheral section of the surface of the layer 3, and a common electrode 5 is formed to one and a discrete electrode 6 to the other, thus manufacturing a photoelectric conversion section 15. Conductive layers 7 and 8 are shaped onto the substrate 1 while being adjoined to the section 15, the whole surface containing the layers 7 and 8 is coated with an insulating layer 9, and section corresponding to the layer 7 is used as a charge storage capacitor section 13. A semiconductor layer 10 is laminated onto the layer 8, ohmic contact layers 11 are formed at both end sections of the surface of the layer 10, and signal extracting lines 12 are connected to the layers 11, thus using the section as a switching transistor. |
