发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enhance the effect of protection film by providing two regions in different thickness to a protection film wherein the first region covers the circuit elements existing region and the second region surrounds the first region which is thicker than the second region. CONSTITUTION:A film 8 is a protection film not existing in the periphery of chip. A double layer with a protection film 7 forms first region, while only the protection film 7 is provided in the existing thickness in the periphery of chip as a second region. According to this structure, crack is not generated by a pressure of film 7 itself and there is no circuit element under the film 7 and therefore any defect due to external pressure is not generated. Meanwhile, the first region alleviates external pressure with the double layer structure and it does not cause any defect on the elements thereunder. A pressure of protection film itself is dispersed to the periphery and thereby crack is not generated. As a result, more effective protection film can be obtained.
申请公布号 JPS6188533(A) 申请公布日期 1986.05.06
申请号 JP19840210008 申请日期 1984.10.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARIMOTO KAZUTAMI;YAMAGATA NARIHITO;IKEDA ISATO;MOROOKA KIICHI
分类号 H01L29/78;H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L29/78
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