MATERIAL FOR SUBSTRATE FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To manufacture the titled lightweight material having superior machinability and a satisfactory heat radiating property by solidifying a molten Al alloy having a specified composition contg. a large amount of Si at a very high cooling rate by an atomizing method to obtain alloy powder and by subjecting the powder to hot plastic working. CONSTITUTION:A molten Al alloy consisting of 30-50wt% Si and the balance Al is solidified at >=10<2> deg.K/sec average cooling rate by an atomizing method to obtain alloy powder of <=42 mesh size. The powder is subjected to hot plastic working. An Al alloy material for a substrate for a semiconductor device contg. proeutectic Si of <=50mum size and having <=18X10<-6>/ deg.C coefft. of thermal expansion is obtd.