| 摘要 |
PURPOSE:To obtain a homogeneous deposited film by individually introducing active seeds generated by decomposition of compound including C and halogen and film forming material gas and exciting and reacting film forming raw material gas with radioactive energy. CONSTITUTION:Gas such as CF4, CHF3, etc. or a compound 115 which assures easy gasification is heated 113 in order to generate active seeds such as CF2*. This active seed is introduced 116 into a film forming chamber and a kind or two or more kinds of film forming raw material such as SiH4, SiH3F, etc. are introduced 116. An introducing flow rate ratio of raw material gas and active seed is set to 8/2-4/6 and it is selected in accordance with the deposition condition and kind of active seed. The raw material gas is excited with energy radiated from discharge energy generating apparatus 117 to react with active seed and thereby the a-Si film is deposited on a substrate 103. Impurity element of gas condition or a compound including it can be doped into a deposited film under the normal temperature and pressure. This method realizes a homogeneous deposited film with good reproducibility. |
