| 摘要 |
PURPOSE:To obtain highly accurate superposed pattern by exposing alignment mark by removing the first resist layer and the second resist layer only on the aligning mark of substrate with irradiation of laser beam and detecting the light reflected from the alignment mark with high sensitivity. CONSTITUTION:A projected alignment mark 12 is formed on a semiconductor substrate 11, the resist layers 13, 14 are stacked thereon, the resist layers 13, 14 are evaporated by irradiation of laser 15 in order to expose a mark 12. Thereafter, when the mark 12 is irradiated with the light 16 for positioning, the reflected light 17 can be obtained effectively from the mark 12 and a highly accurate superposed pattern can be obtained by position of patterns through detection of reflected light 17. |
