发明名称 THIN-FILM TRANSISTOR MATRIX ARRAY
摘要 PURPOSE:To improve reliability to dielectric breakdown due to voltage noises, etc. by previously connecting a gate bus and a data bus constituting a matrix array, bringing both buses to the same potential and electrically isolating both buses after the completion of a desired panel. CONSTITUTION:Gate patterns 1-1, 1-2, 1-3 and data patterns 2-1, 2-2 are formed onto the surface of a glass substrate 7, a plurality of thin-film transistors 3 and picture element electrodes 4 are shaped in regions surrounded by these patterns, and electrodes 5-1, 5-2, 5-3 are each connected to the gate patterns 1-1, 1-2, 1-3 and electrodes 6-1, 6-2, 6-3 to the data patterns 2-1, 2-2, 2-3, thus manufacturing a thin-film transistor array. In the constitution, the gate patterns 1-1, 1-2, 1-3 and the data patterns 2-1, 2-2, 2-3 are all connected by mutual connecting lines 8 and 9 and these patterns are brought previously to the same potential until the array is completed, and the lines 8 and 9 are separated at the positions of cutting lines 10 on the sides of these lines 8 and 9 after the completion of the array.
申请公布号 JPS6188557(A) 申请公布日期 1986.05.06
申请号 JP19840209995 申请日期 1984.10.05
申请人 NIPPON SOKEN INC 发明人 NAKAMURA TAKEHIRO;SATO SUSUMU;HARADA YOSHIHARU
分类号 G02F1/1362;H01L27/12;(IPC1-7):H01L27/12 主分类号 G02F1/1362
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