| 摘要 |
PURPOSE:To improve sensitivity on the short wavelength side by making an N type dopant in concentration sufficient for increasing the mutau (the product of mobility and lift) of electrons on beam projection to contain into an amorphous semiconductor. CONSTITUTION:When P type a-Si:H in 120Angstrom , substantially intrinsic a-Si:H in 5,000Angstrom and Si:H in 500Angstrom containing N type crystallites are deposited on a glass/SnO2 substrate and intrinsic a-Si:H is shaped by a photodetector on which an Al electrode is evaporated, N2 gas is doped by 10ppm, 40ppm, 100ppm and 400ppm to SiH4. Accordingly, sensitivity on the long wavelength side slightly lowers with the increases of the quantity of N2 doped, but sensitivity on the short wavelength side is enhanced remarkably. |
