| 摘要 |
PURPOSE:To obtain homogeneous deposited film by excitation and reaction of Si compound with light energy through individual introduction of active seeds which are generated by decomposition of Si compound of film forming raw material and compound of including Si and halogen. CONSTITUTION:A kind or two kinds of more of SiH4, SiHF3, etc. of film forming materials are introduced 116 into a film forming chamber, the active seeds such as SiF2 are generated by heating 113 the gases such as SiF4, Si6H14 or compound of material which assures easy gasification and such active seeds are also introduced 116. An introducing flow rate ratio of film forming materials and active seeds is set to 8/2-4/6 and it is selected in accordance with deposition condition or a kind of active seeds. The Si compound of film forming materials is excited with light energy of mercury-arc lamp 117 and it is then caused to react with active seeds. Thereby a-Si is deposited on a substrate 103. An impurity element of gas condition or a compound including such element can be doped into a deposited film under the normal temperature and pressure. This method realizes formation of homogeneous deposited film with good reproducibility. |
