| 摘要 |
PURPOSE:To increase the degrees of freedom of the selection of materials and compositions, to widen a range of the selection of emission wavelengths and to obtain a stable light-emitting device with excellent reproducibility by alternately growing a plurality of mutually different substance layers consisting of a simple substance of eight atom layers or less each containing fractions or a binary compound semiconductor substance in an epitaxial manner. CONSTITUTION:Semiconductor layers having superlattice structure in which a plurality of mutually different substance layers L1-LN each composed of layers of eight atom layers or less (also containing fractions) are grown through a MOCVD method or a MBE method in succession at a plurality (M) of periods are shaped onto a single crystal substrate 10 consisting of GaAs, etc., thus constituting a light-emitting region in a semiconductor light-emitting device. Consequently, the arrangement of anions and cations is generated spatially uniformly, and stable luminous characteristics are acquired. Since a composition ratio as a whole is determined separately by the atomic layer ratios and lamination ratios of each substance layer, the degree of freedom of the selection of a component, the degree of the selection of the range of emission wavelengths, is increased. The degree of the selection of materials is improved by taking superlattice structure. |
